发明申请
- 专利标题： Integrated Circuit Having a Cell with a Resistivity Changing Layer
- 专利标题（中）： 具有电阻率变化层的单元的集成电路
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申请号： US11837380申请日： 2007-08-10
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公开(公告)号： US20090039329A1公开(公告)日： 2009-02-12
- 发明人: Franz Hofmann , Josef Willer
- 申请人： Franz Hofmann , Josef Willer
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L21/00
摘要：
In an embodiment of the invention, an integrated circuit having a cell is provided. The cell may include a field effect transistor structure which includes a gate stack and a resistivity changing material structure disposed above the gate stack, wherein the resistivity changing material structure includes a resistivity changing material which is configured to change its resistivity in response to the application of an electrical voltage to the resistivity changing material structure.
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