发明申请
US20090039356A1 PLANAR NONPOLAR M-PLANE GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
审中-公开
PLANAR NONPOLAR M-PLANE组III-NITRIDE FILMS在异物基底上
- 专利标题： PLANAR NONPOLAR M-PLANE GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- 专利标题（中）： PLANAR NONPOLAR M-PLANE组III-NITRIDE FILMS在异物基底上
-
申请号： US12189026申请日： 2008-08-08
-
公开(公告)号： US20090039356A1公开(公告)日： 2009-02-12
- 发明人: Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/205 ; H01L29/20
摘要：
A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.
公开/授权文献
- US1719890A Electric meter 公开/授权日：1929-07-09
信息查询
IPC分类:
