发明申请
US20090039365A1 SEMICONDUCTOR LIGHT EMITTING DEVICES WITH APPLIED WAVELENGTH CONVERSION MATERIALS AND METHODS OF FORMING THE SAME 有权
具有应用波长转换材料的半导体发光器件及其形成方法

  • 专利标题: SEMICONDUCTOR LIGHT EMITTING DEVICES WITH APPLIED WAVELENGTH CONVERSION MATERIALS AND METHODS OF FORMING THE SAME
  • 专利标题(中): 具有应用波长转换材料的半导体发光器件及其形成方法
  • 申请号: US11835044
    申请日: 2007-08-07
  • 公开(公告)号: US20090039365A1
    公开(公告)日: 2009-02-12
  • 发明人: Peter S. AndrewsRonan P. Le Toquin
  • 申请人: Peter S. AndrewsRonan P. Le Toquin
  • 主分类号: H01L29/22
  • IPC分类号: H01L29/22 H01L21/66
SEMICONDUCTOR LIGHT EMITTING DEVICES WITH APPLIED WAVELENGTH CONVERSION MATERIALS AND METHODS OF FORMING THE SAME
摘要:
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
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