发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12247326申请日： 2008-10-08
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公开(公告)号： US20090039394A1公开(公告)日： 2009-02-12
- 发明人: Tomoaki UNO , Masaki Shiraishi , Nobuyoshi Matsuura , Yukihiro Satou
- 申请人： Tomoaki UNO , Masaki Shiraishi , Nobuyoshi Matsuura , Yukihiro Satou
- 优先权： JP2004-008779 20040116
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.
公开/授权文献
- US08044468B2 Semiconductor device 公开/授权日：2011-10-25
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