发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12251536申请日: 2008-10-15
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公开(公告)号: US20090039427A1公开(公告)日: 2009-02-12
- 发明人: Akihiro SHIMIZU , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
- 申请人: Akihiro SHIMIZU , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
- 优先权: JP2000-356497 20001122
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.