发明申请
US20090039461A1 FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS
有权
使用块状半导体波形形成改进的SOI衬底
- 专利标题： FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS
- 专利标题（中）： 使用块状半导体波形形成改进的SOI衬底
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申请号： US12254197申请日： 2008-10-20
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公开(公告)号： US20090039461A1公开(公告)日： 2009-02-12
- 发明人: William K. Henson , Dureseti Chidambarrao , Kern Rim , Hsingjen Wann , Hung Y. Ng
- 申请人： William K. Henson , Dureseti Chidambarrao , Kern Rim , Hsingjen Wann , Hung Y. Ng
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/76
摘要：
The present invention relates to a semiconductor-on-insulator (SOI) substrate having one or more device regions. Each device region comprises at least a base semiconductor substrate layer and a semiconductor device layer with a buried insulator layer located therebetween, while the semiconductor device layer is supported by one or more vertical insulating pillars. The vertical insulating pillars each preferably has a ledge extending between the base semiconductor substrate layer and the semiconductor device layer. The SOI substrates of the present invention can be readily formed from a precursor substrate structure with a “floating” semiconductor device layer that is spaced apart from the base semiconductor substrate layer by an air gap and is supported by one or more vertical insulating pillars. The air gap is preferably formed by selective removal of a sacrificial layer located between the base semiconductor substrate layer and the semiconductor device layer.
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