发明申请
US20090042405A1 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
有权
制造具有高k栅极电介质层和金属栅电极的半导体器件的方法
- 专利标题: Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
- 专利标题(中): 制造具有高k栅极电介质层和金属栅电极的半导体器件的方法
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申请号: US12157796申请日: 2008-06-12
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公开(公告)号: US20090042405A1公开(公告)日: 2009-02-12
- 发明人: Mark L. Doczy , Justin K. Brask , Jack Kavalieros , Uday Shah , Matthew V. Metz , Suman Datta , Ramune Nagisetty , Robert S. Chau
- 申请人: Mark L. Doczy , Justin K. Brask , Jack Kavalieros , Uday Shah , Matthew V. Metz , Suman Datta , Ramune Nagisetty , Robert S. Chau
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part that is formed in the trench and a second part. After a first metal layer with a first workfunction is formed on the first and second parts of the second dielectric layer, part of the first metal layer is converted into a second metal layer with a second workfunction.