发明申请
US20090044753A1 METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS
有权
提高PECVD非晶碳膜薄膜缺陷度的方法
- 专利标题: METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS
- 专利标题(中): 提高PECVD非晶碳膜薄膜缺陷度的方法
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申请号: US12255638申请日: 2008-10-21
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公开(公告)号: US20090044753A1公开(公告)日: 2009-02-19
- 发明人: Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
- 申请人: Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
- 主分类号: H01L21/30
- IPC分类号: H01L21/30
摘要:
An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
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