Abstract:
Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
Abstract:
Various features and processes related to document collaboration are disclosed. In some implementations, animations are presented when updating a local document display to reflect changes made to the document at a remote device. In some implementations, a user can selectively highlight changes made by collaborators in a document. In some implementations, a user can select an identifier associated with another user to display a portion of a document that includes the other user's cursor location. In some implementations, text in document chat sessions can be automatically converted into hyperlinks which, when selected, cause a document editor to perform an operation.
Abstract:
Various features and processes related to document collaboration are disclosed. In some implementations, animations are presented when updating a local document display to reflect changes made to the document at a remote device. In some implementations, a user can selectively highlight changes made by collaborators in a document. In some implementations, a user can select an identifier associated with another user to display a portion of a document that includes the other user's cursor location. In some implementations, text in document chat sessions can be automatically converted into hyperlinks which, when selected, cause a document editor to perform an operation.
Abstract:
Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.
Abstract:
Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.
Abstract:
A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
Abstract:
The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.
Abstract:
Radially disposed ribs for supporting the canopy of an umbrella are pivotally connected by a crown mounted on the outer end of a rod. A sleeve is in external sliding relationship with the rod. Struts are pivotally connected to the sleeve, each strut being associated with one of the ribs for splaying the ribs and collapsing them inwardly. A support tube is connected by a coaxial shaft to the rod, and the sleeve is telescopically received in the support tube. The shaft is threaded and rotated by motor, opposing ends of the threaded shaft being supported for rotation in first and second journals fixed within the support tube and the rod, respectively. A threaded nut fixedly connected to the sleeve is engaged with the threaded shaft for moving the sleeve along the rod between extended and retracted positions.
Abstract:
A method of generating a composite signal includes the steps of: (a) generating a plurality of sub-carriers, each sub-carrier having a different frequency position in a frequency spectrum; (b) generating a plurality of codes; and (c) forming a plurality of code combinations from the plurality of codes generated in step (b). The method also includes the steps of (d) first modulating each sub-carrier using a respective one of the code combinations formed in step (c) to form a plurality of modulated sub-carriers; and (e) second modulating in-phase and quadrature components of a base carrier using the plurality of modulated sub-carriers to form the composite signal having multiple carriers. The composite signal is a constant envelope signal, and a single sideband signal.
Abstract:
An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.