发明申请
- 专利标题： SEMICONDUCTOR DEVICE CONTAINING AN ALUMINUM TANTALUM CARBONITRIDE BARRIER FILM AND METHOD OF FORMING
- 专利标题（中）： 含有铝碳纳米管膜的半导体器件及其形成方法
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申请号： US11839410申请日： 2007-08-15
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公开(公告)号： US20090045514A1公开(公告)日： 2009-02-19
- 发明人: Tadahiro ISHIZAKA , Shigeru Mizuno
- 申请人： Tadahiro ISHIZAKA , Shigeru Mizuno
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.
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