发明申请
- 专利标题： Strained Semiconductor Device and Method of Making Same
- 专利标题（中）： 应变半导体器件及其制造方法
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申请号： US11841516申请日： 2007-08-20
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公开(公告)号： US20090050972A1公开(公告)日： 2009-02-26
- 发明人: Richard Lindsay , Shyue Seng Tan , Joo-Chan Kim , Jun Jung Kim , Hyung-Yoon Choi , Chung Woh Lai , Johnny Widodo
- 申请人： Richard Lindsay , Shyue Seng Tan , Joo-Chan Kim , Jun Jung Kim , Hyung-Yoon Choi , Chung Woh Lai , Johnny Widodo
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48 ; H01L21/336 ; H01L29/78
摘要：
A method of making a semiconductor device is disclosed. A semiconductor body, a gate electrode and source/drain regions are provided. A liner is provided that covers the gate electrode and the source/drain regions. Silicide regions are formed on the semiconductor device by etching a contact hole through the liner.
公开/授权文献
- US1255384A Means for transporting poles or the like. 公开/授权日：1918-02-05
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