发明申请
- 专利标题： SUBSTRATE PROCESSING METHOD AND COMPUTER STORAGE MEDIUM
- 专利标题（中）： 基板处理方法和计算机存储介质
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申请号： US12192422申请日： 2008-08-15
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公开(公告)号： US20090053904A1公开(公告)日： 2009-02-26
- 发明人: Gen You , Makoto Muramatsu , Hiroyuki Fujii , Shouichi Terada , Takanori Nishi
- 申请人： Gen You , Makoto Muramatsu , Hiroyuki Fujii , Shouichi Terada , Takanori Nishi
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-217807 20070824; JP2008-192129 20080725
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; G06F19/00
摘要：
In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.
公开/授权文献
- US08084372B2 Substrate processing method and computer storage medium 公开/授权日：2011-12-27