Invention Application
US20090056875A1 Enhanced stripping of low-K films using downstream gas mixing
审中-公开
使用下游气体混合来增强低K膜的剥离
- Patent Title: Enhanced stripping of low-K films using downstream gas mixing
- Patent Title (中): 使用下游气体混合来增强低K膜的剥离
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Application No.: US11712253Application Date: 2007-02-27
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Publication No.: US20090056875A1Publication Date: 2009-03-05
- Inventor: Haruhiro Harry Goto , David Cheung , Prabhat Kumar Sinha
- Applicant: Haruhiro Harry Goto , David Cheung , Prabhat Kumar Sinha
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Main IPC: C23F1/00
- IPC: C23F1/00
Abstract:
The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.
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