公开(公告)号：US09613825B2

公开(公告)日：2017-04-04

申请号：US13590083

申请日：2012-08-20

申请人： Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

发明人： Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

IPC分类号： H01L21/311 ,  G03F7/42 ,  H01J37/32

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32449 ,  H01J37/32724

摘要： Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

公开(公告)号：US09274851B2

公开(公告)日：2016-03-01

申请号：US12626432

申请日：2009-11-25

申请人： David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

发明人： David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

IPC分类号： G06F9/50 ,  H04L12/64 ,  H04M7/00 ,  G06F9/455 ,  H04L29/06

CPC分类号： G06F9/5077 ,  G06F9/45533 ,  G06F9/45537 ,  H04L12/6418 ,  H04L29/06176 ,  H04M7/006

摘要： Techniques for providing core-based virtualization based upon cores provided by one or more processors of a system. A device such as a network device comprising multiple processor cores provides for core-based virtualization. According to one embodiment, a network device is provided comprising a first subsystem for processing packets received by the network device. The first subsystem may comprise a set of one or more processors, the one or more processors providing a plurality of cores. Each core in the plurality of cores may have associated memory resources.

摘要翻译： 基于由系统的一个或多个处理器提供的核提供基于核心的虚拟化的技术。 包括多个处理器核心的诸如网络设备的设备提供基于核心的虚拟化。 根据一个实施例，提供一种网络设备，其包括用于处理由网络设备接收的分组的第一子系统。 第一子系统可以包括一组一个或多个处理器，所述一个或多个处理器提供多个核。 多个核心中的每个核心可以具有相关联的存储器资源。

公开(公告)号：US09209000B2

公开(公告)日：2015-12-08

申请号：US13342757

申请日：2012-01-03

申请人： Huatan Qiu ,  Woody Chung ,  Anirban Guha ,  David Cheung

发明人： Huatan Qiu ,  Woody Chung ,  Anirban Guha ,  David Cheung

IPC分类号： H01J37/32 ,  C23C16/455 ,  H01L21/311

CPC分类号： H01J37/3244 ,  C23C16/45519 ,  H01J37/32449 ,  H01L21/31138

摘要： Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.

摘要翻译： 提供了用于等离子体剥离的系统，系统组件和方法。 在一个实施例中，气流分配容座可以具有圆形部分，该圆形部分包括限定接收腔的内表面，形成封闭端的外表面和外表面上的中心点，其具有延伸穿过其中的纵向轴线并且通过接收腔 。 第一和第二开口环提供与等离子体室的流动连通。 所述第二开口环设置在所述第一环和所述中心点之间，并且所述第二开口环的每个开口在所述内表面和所述外表面之间以相对于所述纵向轴线的第二角度延伸，所述纵向轴线小于所述第一角度并具有 直径基本上与相邻开口的直径相同，并且小于第一开口环的开口的直径。

公开(公告)号：US08444869B1

公开(公告)日：2013-05-21

申请号：US12786230

申请日：2010-05-24

申请人： Haruhiro Harry Goto ,  David Cheung

发明人： Haruhiro Harry Goto ,  David Cheung

IPC分类号： H01L21/302

CPC分类号： H01L21/67028 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68771 ,  Y10S134/902 ,  Y10S438/906

摘要： A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.

摘要翻译： 一种用于清洁晶片的方法和装置。 晶片被加热并移动到设备内的处理站，该处理站具有永久地处于压板下降位置的压板，或者可以从压板向上位置传递到压板向下位置。 将晶片定位在压板上方，以便不与压板接触并在压板和晶片之间提供间隙。 可以通过将压板放置在压板向下位置来产生间隙。 等离子体流入间隙，以能够从晶片正面，背面和边缘同时移除材料。 该设备可以包括具有位于其中的间隙的单个处理站，或者该设备可以包括多个处理站，每个处理站能够在其中形成间隙，以从晶片前侧，后侧和边缘同时移除附加材料。

公开(公告)号：US08409249B2

公开(公告)日：2013-04-02

申请号：US12079049

申请日：2008-03-24

申请人： Olexander Hnojewyj ,  Bruce Addis ,  Daniel Browne ,  David Cheung

发明人： Olexander Hnojewyj ,  Bruce Addis ,  Daniel Browne ,  David Cheung

IPC分类号： A61B17/08

CPC分类号： A61B17/0057 ,  A61B17/00491 ,  A61B2017/00004 ,  A61B2017/00495 ,  A61B2017/00637 ,  A61B2017/0065 ,  A61B2017/00654 ,  A61B2017/00663

摘要： Systems and methods employ functional instruments to close incisions and wounds using a suture knot in combination with a biocompatible material composition. The systems and methods are well suited for use, for example, at a vascular puncture site following a vascular access procedure.

公开(公告)号：US20120135376A1

公开(公告)日：2012-05-31

申请号：US13262541

申请日：2010-03-30

申请人： David Cheung ,  Edwin Shors ,  William Knox

发明人： David Cheung ,  Edwin Shors ,  William Knox

IPC分类号： A61C19/06 ,  B29C39/38 ,  A61P43/00 ,  A61C5/14 ,  A61K9/00 ,  A61K38/39

CPC分类号： A61C8/0006 ,  A61L27/24 ,  A61L27/50 ,  A61L27/56 ,  A61L27/58 ,  A61L2430/02

摘要： A biocompatible, resorbable collagen membrane having a wedge shape with a thick edge of relatively higher strength and rigidity and a thin edge of relatively higher deformability and elasticity, which membrane is bendable to a desired configuration and is sufficiently rigid to retain the bent configuration upon implantation at a surgical site; a method of making such a membrane, and the use of such a membrane in a “sinus lift” procedure for augmenting alveolar bone.

摘要翻译： 具有楔形形状的生物相容性可再吸收的胶原膜，其具有相对较高强度和刚性的较厚边缘以及相对较高变形能力和弹性的薄边缘，该膜可弯曲成所需构型，并且足够刚性以在植入时保持弯曲构型 在手术部位; 制造这种膜的方法，以及在“窦升高”方法中使用这种膜来增加牙槽骨。

公开(公告)号：US20110139175A1

公开(公告)日：2011-06-16

申请号：US12963503

申请日：2010-12-08

申请人： David Cheung ,  Haoquan Fang ,  Jack Kuo ,  Ilia Kalinovski ,  Ted Li ,  Andrew Yao

发明人： David Cheung ,  Haoquan Fang ,  Jack Kuo ,  Ilia Kalinovski ,  Ted Li ,  Andrew Yao

IPC分类号： H05H1/24 ,  B08B13/00 ,  B08B7/00

CPC分类号： H01L21/31138 ,  H01J37/32357 ,  H01L21/02057

摘要： Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.

摘要翻译： 提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进的方法和设备。 根据各种实施例，工件暴露于钝化等离子体，允许冷却一段时间，然后暴露于氧基或氢基等离子体以除去光致抗蚀剂和与离子注入相关的残余物。 本发明的方面包括减少硅损失，留下很少或没有残留物，同时保持可接受的剥离速率。 在某些实施方案中，方法和装置在高剂量离子注入工艺之后去除光致抗蚀剂材料。

公开(公告)号：US20110126196A1

公开(公告)日：2011-05-26

申请号：US12626432

申请日：2009-11-25

申请人： David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

发明人： David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

IPC分类号： G06F9/50

CPC分类号： G06F9/5077 ,  G06F9/45533 ,  G06F9/45537 ,  H04L12/6418 ,  H04L29/06176 ,  H04M7/006

摘要： Techniques for providing core-based virtualization based upon cores provided by one or more processors of a system. A device such as a network device comprising multiple processor cores provides for core-based virtualization.

摘要翻译： 基于由系统的一个或多个处理器提供的核提供基于核心的虚拟化的技术。 包括多个处理器核心的诸如网络设备的设备提供基于核心的虚拟化。

公开(公告)号：US07760694B2

公开(公告)日：2010-07-20

申请号：US11458476

申请日：2006-07-19

申请人： David Cheung ,  Sathish K. Kumar

发明人： David Cheung ,  Sathish K. Kumar

IPC分类号： H04W4/00

CPC分类号： H04W72/1257 ,  H04W88/04

摘要： Direct communication between devices in a wireless network without going through a base station is described herein. Such communication may be possible by deviating from a transmission map to be broadcasted by the base station of the wireless network.

摘要翻译： 这里描述了无需通过基站的无线网络中的设备之间的直接通信。 可以通过偏离由无线网络的基站广播的传输图来实现这种通信。

公开(公告)号：US07651725B2

公开(公告)日：2010-01-26

申请号：US11923037

申请日：2007-10-24

申请人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

发明人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC分类号： B05D5/12 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。