发明申请
- 专利标题： METHOD FOR PHOTORESIST CHARACTERIZATION AND ANALYSIS
- 专利标题（中）： 光电子学特征和分析方法
-
申请号： US11866008申请日： 2007-10-02
-
公开(公告)号： US20090057554A1公开(公告)日： 2009-03-05
- 发明人: Hsiao-Wei Yeh , Jen-Chieh Shih
- 申请人： Hsiao-Wei Yeh , Jen-Chieh Shih
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G01N23/00
- IPC分类号： G01N23/00
摘要：
A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.
公开/授权文献
- US07777184B2 Method for photoresist characterization and analysis 公开/授权日：2010-08-17
信息查询
