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    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY
    1.
    发明申请
    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY 有权
    光刻技术的材料与方法

    公开(公告)号：US20120009524A1

    公开(公告)日：2012-01-12

    申请号：US13238335

    申请日：2011-09-21

    申请人： Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    发明人： Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    IPC分类号： G03F7/20 ,  H01L21/312

    CPC分类号： G03F7/0397 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

    摘要： A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

    摘要翻译： 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。

    Si Device Making Method By Using A Novel Material For Packing and Unpacking Process
    4.
    发明申请
    Si Device Making Method By Using A Novel Material For Packing and Unpacking Process 有权
    通过使用新型材料进行包装和开箱过程的Si装置制造方法

    公开(公告)号：US20090203224A1

    公开(公告)日：2009-08-13

    申请号：US12028580

    申请日：2008-02-08

    申请人： Jen-Chieh Shih ,  Hsiao-Wei Yeh

    发明人： Jen-Chieh Shih ,  Hsiao-Wei Yeh

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76816 ,  G03F7/0035 ,  G03F7/40 ,  Y10S430/114 ,  Y10S430/128

    摘要： A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.

    摘要翻译： 光刻图案的方法包括在基板上形成抗蚀剂图案，抗蚀剂图案包括至少一个期望的开口和在基板上的至少一个填充开口; 在抗蚀剂图案和基板上形成图案化的感光材料层，其中图案化感光材料层覆盖抗蚀图案的填充开口; 以及通过辅助化学收缩（RELACS）工艺对抗蚀剂图案的期望的开口施加分辨率增强光刻。

    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY
    5.
    发明申请
    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY 有权
    光刻技术的材料与方法

    公开(公告)号：US20080286682A1

    公开(公告)日：2008-11-20

    申请号：US11748322

    申请日：2007-05-14

    申请人： Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    发明人： Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    IPC分类号： G03C1/00 ,  G03C5/00

    CPC分类号： G03F7/0397 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

    摘要： A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

    摘要翻译： 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。

    Si device making method by using a novel material for packing and unpacking process
    6.
    发明授权
    Si device making method by using a novel material for packing and unpacking process 有权
    Si器件制造方法采用新型材料进行包装和拆包工艺

    公开(公告)号：US08039195B2

    公开(公告)日：2011-10-18

    申请号：US12028580

    申请日：2008-02-08

    申请人： Jen-Chieh Shih ,  Hsiao-Wei Yeh

    发明人： Jen-Chieh Shih ,  Hsiao-Wei Yeh

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/20

    CPC分类号： H01L21/76816 ,  G03F7/0035 ,  G03F7/40 ,  Y10S430/114 ,  Y10S430/128

    摘要： A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.

    摘要翻译： 光刻图案的方法包括在基板上形成抗蚀剂图案，抗蚀剂图案包括至少一个期望的开口和在基板上的至少一个填充开口; 在抗蚀剂图案和基板上形成图案化的感光材料层，其中图案化感光材料层覆盖抗蚀图案的填充开口; 以及通过辅助化学收缩（RELACS）工艺对抗蚀剂图案的期望的开口施加分辨率增强光刻。

    Method for photoresist characterization and analysis
    7.
    发明授权
    Method for photoresist characterization and analysis 有权
    光刻胶表征和分析方法

    公开(公告)号：US07777184B2

    公开(公告)日：2010-08-17

    申请号：US11866008

    申请日：2007-10-02

    申请人： Hsiao-Wei Yeh ,  Jen-Chieh Shih

    发明人： Hsiao-Wei Yeh ,  Jen-Chieh Shih

    IPC分类号： G01N23/00 ,  G21K7/00

    CPC分类号： G03F7/105 ,  G03F7/26

    摘要： A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.

    摘要翻译： 光致抗蚀剂表征的方法包括在支撑结构上形成光致抗蚀剂; 并且使用选自透射电子显微镜（TEM），扫描电子显微镜（SEM），原子力显微镜（AFM），小角度X射线散射（SAXS）和 激光衍射粒子分析仪。

    METHOD FOR PHOTORESIST CHARACTERIZATION AND ANALYSIS
    8.
    发明申请
    METHOD FOR PHOTORESIST CHARACTERIZATION AND ANALYSIS 有权
    光电子学特征和分析方法

    公开(公告)号：US20090057554A1

    公开(公告)日：2009-03-05

    申请号：US11866008

    申请日：2007-10-02

    申请人： Hsiao-Wei Yeh ,  Jen-Chieh Shih

    发明人： Hsiao-Wei Yeh ,  Jen-Chieh Shih

    IPC分类号： G01N23/00

    CPC分类号： G03F7/105 ,  G03F7/26

    摘要： A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.

    摘要翻译： 光致抗蚀剂表征的方法包括在支撑结构上形成光致抗蚀剂; 并且使用选自透射电子显微镜（TEM），扫描电子显微镜（SEM），原子力显微镜（AFM），小角度X射线散射（SAXS）和 激光衍射粒子分析仪。

    LED bulb
    9.
    发明授权
    LED bulb 有权

    公开(公告)号：US10690291B1

    公开(公告)日：2020-06-23

    申请号：US16411157

    申请日：2019-05-14

    申请人： Jen-Chieh Shih

    发明人： Jen-Chieh Shih

    IPC分类号： F21K9/232 ,  F21K9/238 ,  F21V29/71 ,  F21Y115/10

    摘要： A LED bulb comprises: a lamp-seat capable of connecting an external power supply, a lampshade fixed above the lamp-seat, and a circuit board mounted in the lamp-seat and the lampshade. The bottom end of the circuit board is electrically connected to the lamp-seat, and the top end defines a first portion provided for setting the upper-emitting light-source module. The circuit board has a second portion with a width gradually downwardly widened, and the second portion is set with an oblique-upper emitting light-source module. The circuit board is connected to a third portion, and the third portion has a width gradually narrowed downwardly, and the third portion is set with an oblique-lower emitting light-source module. The light-source modules are composed of a plurality of LED arrays and are suspended inside the lampshade, so they are compatible with the specification requirements of the United Nations Economic Commission for Europe's automotive Regulations.