发明申请
US20090057869A1 CO-PACKAGED HIGH-SIDE AND LOW-SIDE NMOSFETS FOR EFFICIENT DC-DC POWER CONVERSION
审中-公开
用于高效直流 - 直流电源转换的高压侧和低端NMOS管
- 专利标题： CO-PACKAGED HIGH-SIDE AND LOW-SIDE NMOSFETS FOR EFFICIENT DC-DC POWER CONVERSION
- 专利标题（中）： 用于高效直流 - 直流电源转换的高压侧和低端NMOS管
-
申请号： US11849160申请日： 2007-08-31
-
公开(公告)号： US20090057869A1公开(公告)日： 2009-03-05
- 发明人: Francois Hebert , Xiaotian Zhang , Kai Liu , Ming Sun , Anup Bhalla
- 申请人： Francois Hebert , Xiaotian Zhang , Kai Liu , Ming Sun , Anup Bhalla
- 申请人地址： BM Hamilton
- 专利权人： ALPHA & OMEGA SEMICONDUCTOR, LTD.
- 当前专利权人： ALPHA & OMEGA SEMICONDUCTOR, LTD.
- 当前专利权人地址： BM Hamilton
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A circuit package assembly is disclosed. The assembly includes a conductive substrate; a high-side n-channel metal oxide semiconductor field effect transistor (NMOSFET) having a source on a side facing a surface of the conductive substrate and in electrical contact therewith and a low-side standard n-channel metal oxide semiconductor field effect transistor (NMOSFET) having a drain on a side facing the conductive substrate and in electrical contact therewith. Co-packaging of high-side and low-side NMOSFETs in this manner may reduce package size and parasitic inductance and capacitance compared to conventional packaging.
信息查询
IPC分类:
