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    Enhanced lift-off techniques for use with dielectric optical coatings and light sensors produced therefrom
    1.
    发明授权
    Enhanced lift-off techniques for use with dielectric optical coatings and light sensors produced therefrom 有权
    用于介质光学涂层和由其生产的光传感器的增强剥离技术

    公开(公告)号：US08836064B2

    公开(公告)日：2014-09-16

    申请号：US13530809

    申请日：2012-06-22

    申请人： Eric S. Lee ,  Michael I-Shan Sun ,  Francois Hebert

    发明人： Eric S. Lee ,  Michael I-Shan Sun ,  Francois Hebert

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/02327 ,  H01L21/0272 ,  H01L31/02162 ,  H01L31/101 ,  H01L31/103 ,  H01L31/18

    摘要： Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.

    摘要翻译： 本文描述了包括用于塑造其光谱响应的介电光学涂层的光传感器以及以加速剥离过程并增加工艺裕度的方式制造这种光传感器的方法。 在某些实施例中，执行短持续时间的软烘烤。 或者或另外，进行温度循环。 或者或附加地，使用包括一个或多个虚拟角，虚拟岛和/或虚拟环的光掩模来执行光刻。 上述实施例中的每一个形成和/或增加了不覆盖光电检测器传感器区域的电介质光学涂层中的数量的微裂纹，由此实现加速的剥离过程和增加的工艺余量。 或者或另外，光掩模的一部分可以包括倒角，使得介电光学涂层包括倒角，这改善了介电光学涂层的热可靠性。

    Power devices with integrated protection devices: structures and methods
    2.
    发明授权
    Power devices with integrated protection devices: structures and methods 失效
    具有集成保护装置的电力设备：结构和方法

    公开(公告)号：US08492773B2

    公开(公告)日：2013-07-23

    申请号：US12950453

    申请日：2010-11-19

    申请人： Francois Hebert

    发明人： Francois Hebert

    IPC分类号： H01L29/15

    CPC分类号： H01L27/0255 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/0688 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/8611 ,  H01L29/872

    摘要： Exemplary embodiments provide structures and methods for power devices with integrated clamp structures. The integration of clamp structures can protect the power device, e.g., from electrical overstress (EOS). In one embodiment, active devices can be formed over a substrate, while a clamp structure can be integrated outside the active regions of the power device, for example, under the active regions and/or inside the substrate. Integrating clamp structure outside active regions of power devices can maximize the active area for a given die size and improve robustness of the clamped device since the current will spread in the substrate by this integration.

    摘要翻译： 示例性实施例提供了具有集成钳位结构的功率器件的结构和方法。 夹紧结构的集成可以保护功率器件，例如不受电力过应力（EOS）的影响。 在一个实施例中，有源器件可以形成在衬底上，而钳位结构可以集成在功率器件的有源区域外部，例如在有源区域下方和/或衬底内部。 在功率器件的有源区域之外集成钳位结构可以使给定管芯尺寸的有效面积最大化，并且改善钳位器件的鲁棒性，因为电流将通过该积分在衬底中扩展。

    OPTICAL SENSORS FOR DETECTING RELATIVE MOTION AND/OR POSITION AND METHODS AND SYSTEMS FOR USING SUCH OPTICAL SENSORS
    3.
    发明申请
    OPTICAL SENSORS FOR DETECTING RELATIVE MOTION AND/OR POSITION AND METHODS AND SYSTEMS FOR USING SUCH OPTICAL SENSORS 有权
    用于检测相对运动和/或位置的光学传感器以及使用这种光学传感器的方法和系统

    公开(公告)号：US20120312962A1

    公开(公告)日：2012-12-13

    申请号：US13584623

    申请日：2012-08-13

    申请人： Francois Hebert

    发明人： Francois Hebert

    IPC分类号： G01J1/44 ,  G01J1/04

    CPC分类号： H01L31/02327 ,  G02B5/208 ,  G06F3/0304 ,  G06F3/03547 ,  G06F3/042 ,  G06F3/0421 ,  G06F3/04883 ,  H01L31/02162

    摘要： A system according to an embodiment of the present invention includes one or more first optical sensors and one or more second optical sensors. The first optical sensor(s) each include a photodetector region and a plurality of first slats over the photodetector region. The second optical sensor(s) each include a photodetector region and a plurality of second slats over the photodetector region, wherein the second slats have a different configuration than the first slats. For example, the second slats can be orthogonal relative to the first slats. For another example, the first slats can slant in a first direction, and the second slats can slant in a second direction generally opposite the first direction. Currents produced by the first optical sensor(s) and the second optical sensor(s), which are indicative of light incident on the optical sensors, are useful for distinguishing between movement in at least two different directions.

    摘要翻译： 根据本发明实施例的系统包括一个或多个第一光学传感器和一个或多个第二光学传感器。 第一光学传感器各自包括光电检测器区域和光电检测器区域上的多个第一板条。 第二光学传感器各自包括光电检测器区域和光电检测器区域上的多个第二板条，其中第二板条具有与第一板条不同的构造。 例如，第二板条可以相对于第一板条正交。 对于另一示例，第一板条可以在第一方向上倾斜，并且第二板条可以在大致与第一方向相反的第二方向上倾斜。 由第一光学传感器和第二光学传感器产生的指示入射在光学传感器上的光的电流可用于区分至少两个不同方向上的运动。

    DIAMOND SOI WITH THIN SILICON NITRIDE LAYER
    7.
    发明申请
    DIAMOND SOI WITH THIN SILICON NITRIDE LAYER 有权
    具有薄硅酸盐层的金刚石SOI

    公开(公告)号：US20110186959A1

    公开(公告)日：2011-08-04

    申请号：US12887797

    申请日：2010-09-22

    申请人： Rick C. Jerome ,  Francois Hebert ,  Craig McLachlan ,  Kevin Hoopingarner

    发明人： Rick C. Jerome ,  Francois Hebert ,  Craig McLachlan ,  Kevin Hoopingarner

    IPC分类号： H01L29/06 ,  H01L21/20

    CPC分类号： H01L21/02107

    摘要： A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.

    摘要翻译： 一种用于半导体器件的方法和结构，所述器件包括处理晶片，直接形成在所述手柄晶片前侧上的金刚石层以及直接形成在所述手柄晶片的背面上的厚氧化物层，所述氧化物 抵抗金刚石层的拉伸应力的厚度。 在金刚石层和厚氧化物层的外表面上形成氮化物层，并且在氮化物层的外表面上形成多晶硅。 器件晶片被结合到处理晶片以形成半导体器件。

    SUPER-SELF-ALIGNED TRENCH-DMOS STRUCTURE AND METHOD
    9.
    发明申请
    SUPER-SELF-ALIGNED TRENCH-DMOS STRUCTURE AND METHOD 有权
    超自对准TRENCH-DMOS结构和方法

    公开(公告)号：US20110068395A1

    公开(公告)日：2011-03-24

    申请号：US12958162

    申请日：2010-12-01

    申请人： Francois Hebert

    发明人： Francois Hebert

    IPC分类号： H01L29/78

    CPC分类号： H01L29/66734 ,  H01L21/2257 ,  H01L29/04 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/7813

    摘要： A semiconductor device includes a P-body layer formed in an N-epitaxial layer; a gate electrode formed in a trench in the P-body and N-epitaxial layer; a top source region formed from the P-body layer next to the gate electrode; a gate insulator disposed along a sidewall of the gate electrode between the gate electrode and the source, between the gate electrode and the P-body and between the gate electrode and the N-epitaxial layer; a cap insulator disposed on top of the gate electrode; and an N+ doped spacer disposed along a sidewall of the source and a sidewall of the gate insulator. The source includes N+ dopants diffused from the spacer. A body contact region containing P-type dopants is formed from the N-epitaxial layer. The contact region touches one or more P-doped regions of the P-body layer and the source. Methods for manufacturing such a device are also disclosed. Embodiments of this invention may also be applied to P-channel devices.

    摘要翻译： 半导体器件包括在N外延层中形成的P体层; 形成在P体和N外延层中的沟槽中的栅电极; 由栅极电极旁边的P体层形成的顶部源极区域; 沿着栅电极的侧壁设置在栅电极和源极之间，栅电极和P体之间以及栅电极和N外延层之间的栅极绝缘体; 设置在所述栅电极的顶部的盖绝缘体; 以及沿着源极的侧壁和栅极绝缘体的侧壁设置的N +掺杂的间隔物。 源包括从间隔物扩散的N +掺杂剂。 由N型外延层形成含有P型掺杂剂的体接触区域。 接触区域接触P体层和源的一个或多个P掺杂区域。 还公开了制造这种装置的方法。 本发明的实施例也可以应用于P沟道器件。