发明申请
- 专利标题: METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
- 专利标题(中): 生产多晶硅的方法
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申请号: US12190229申请日: 2008-08-12
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公开(公告)号: US20090060822A1公开(公告)日: 2009-03-05
- 发明人: Takaaki Shimizu , Kyoji Oguro , Takeshi Aoyama
- 申请人: Takaaki Shimizu , Kyoji Oguro , Takeshi Aoyama
- 申请人地址: JP Chiyoda-ku
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Chiyoda-ku
- 优先权: JP2007-229856 20070905
- 主分类号: H01L21/205
- IPC分类号: H01L21/205
摘要:
A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, poly-silane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
公开/授权文献
- US07691357B2 Method for producing polycrystalline silicon 公开/授权日:2010-04-06