发明申请
- 专利标题： FILM FORMING METHOD AND FILM FORMING APPARATUS
- 专利标题（中）： 薄膜成型方法和薄膜成型装置
-
申请号： US11910983申请日： 2006-04-07
-
公开(公告)号： US20090061092A1公开(公告)日： 2009-03-05
- 发明人: Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
- 申请人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2005-112625 20050408
- 国际申请： PCT/JP2006/307475 WO 20060407
- 主分类号： C23C16/36
- IPC分类号： C23C16/36 ; C23C16/42
摘要：
A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.
公开/授权文献
- US07897205B2 Film forming method and film forming apparatus 公开/授权日：2011-03-01
信息查询
IPC分类:
