发明申请
- 专利标题： SACRIFICIAL NITRIDE AND GATE REPLACEMENT
- 专利标题（中）： 硝酸盐和盖茨更换
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申请号： US11847507申请日： 2007-08-30
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公开(公告)号： US20090061650A1公开(公告)日： 2009-03-05
- 发明人: Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
- 申请人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
- 申请人地址： US CA Sunnyvale
- 专利权人： SPANSION LLC
- 当前专利权人： SPANSION LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.
公开/授权文献
- US07981745B2 Sacrificial nitride and gate replacement 公开/授权日：2011-07-19
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