发明申请
- 专利标题： Semiconductor Device Made by Using a Laser Anneal to Incorporate Stress into a Channel Region
- 专利标题（中）： 使用激光退火制造的半导体器件将应力引入通道区域
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申请号： US11853328申请日： 2007-09-11
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公开(公告)号： US20090065880A1公开(公告)日： 2009-03-12
- 发明人: Amitabh Jain , Manoj Mehrotra
- 申请人： Amitabh Jain , Manoj Mehrotra
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/336
摘要：
In one aspect there is provided a method of manufacturing a semiconductor device comprising forming gate electrodes over a semiconductor substrate, forming source/drains adjacent the gate electrodes, depositing a stress inducing layer over the gate electrodes. A laser anneal is conducted on at least the gate electrodes subsequent to depositing the stress inducing layer at a temperature of at least about 1100° C. for a period of time of at least about 300 microseconds, and the semiconductor device is subjected to a thermal anneal subsequent to conducting the laser anneal.
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