发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND PRODUCING METHOD OF THE SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12207288申请日： 2008-09-09
-
公开(公告)号： US20090065906A1公开(公告)日： 2009-03-12
- 发明人: Kazumasa Tanida , Masahiro Sekiguchi , Ninao Sato , Kenji Takahashi
- 申请人： Kazumasa Tanida , Masahiro Sekiguchi , Ninao Sato , Kenji Takahashi
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2007-236637 20070912
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.
公开/授权文献
- US07888778B2 Semiconductor device and producing method of the same 公开/授权日：2011-02-15
信息查询
IPC分类:
