发明申请
US20090066299A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING MEMS-TYPE VARIABLE CAPACITANCE CAPACITOR
有权
半导体集成电路及控制MEMS型可变电容电容器的方法
- 专利标题： SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING MEMS-TYPE VARIABLE CAPACITANCE CAPACITOR
- 专利标题（中）： 半导体集成电路及控制MEMS型可变电容电容器的方法
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申请号： US12206179申请日： 2008-09-08
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公开(公告)号： US20090066299A1公开(公告)日： 2009-03-12
- 发明人: Atsushi Suzuki
- 申请人： Atsushi Suzuki
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-236177 20070912
- 主分类号： G05F1/10
- IPC分类号： G05F1/10
摘要：
A first pump circuit generates a first voltage for decreasing the distance between primary electrodes. The first voltage is limited to a predetermined limit by a first limiter circuit. A second pump circuit generates a second voltage for keeping the distance between the primary electrodes constant. A third pump circuit generates the second voltage and has a supplying capacity smaller than the first one. The second voltage is limited by second and third limiter circuits. A ripple capacitor is charged up to the second voltage by the second pump circuit and the second limiter circuit within a period of time the first voltage is being generated. When a supplying voltage of the first pump circuit reaches to the first voltage, and a deformation stops, the second voltage is supplied by the third pump circuit and the third limiter circuit instead of the second pump circuit and the second limiter circuit.