发明申请
- 专利标题： Electric element, memory device, and semiconductor integrated circuit
- 专利标题（中）： 电子元件，存储器件和半导体集成电路
-
申请号： US11918361申请日： 2006-04-04
-
公开(公告)号： US20090067214A1公开(公告)日： 2009-03-12
- 发明人: Satoru Mitani , Koichi Osano , Shunsaku Muraoka , Kumio Nago
- 申请人： Satoru Mitani , Koichi Osano , Shunsaku Muraoka , Kumio Nago
- 优先权： JP2005-114093 20050412
- 国际申请： PCT/JP2006/307114 WO 20060404
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L47/00
摘要：
An electric element includes a first terminal (1), a second terminal (3), and a variable-resistance film (2). The variable-resistance film (2) is connected between the first terminal (1) and the second terminal (3). The variable-resistance film (2) includes Fe3O4 crystal phase and Fe2O3 crystal phase.
公开/授权文献
信息查询
