发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT, PARTICULARLY MEMORY ELEMENT OR LOGIC ELEMENT, AND METHOD FOR WRITING INFORMATION TO SUCH AN ELEMENT
- 专利标题（中）： 磁性元件，特别是记忆元件或逻辑元件，以及向这些元件写信息的方法
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申请号： US11909854申请日： 2006-03-30
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公开(公告)号： US20090067224A1公开(公告)日： 2009-03-12
- 发明人: Andreas Hochstrat , Xi Chen , Pavel Borisov , Wolfgang Kleemann
- 申请人： Andreas Hochstrat , Xi Chen , Pavel Borisov , Wolfgang Kleemann
- 申请人地址： DE Essen
- 专利权人： UNIVERSITÄT DUISBURG-ESSEN
- 当前专利权人： UNIVERSITÄT DUISBURG-ESSEN
- 当前专利权人地址： DE Essen
- 优先权： DE102005014820.4 20050330; DE102005015339.9 20050401; DE102005043574.2 20050912
- 国际申请： PCT/EP2006/002892 WO 20060330
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A magnetoresistive element, in particular a memory element or a logic element and a method for writing information to such an element are disclosed. The element comprises a first contact of ferromagnetic material and a corresponding layer of magnetoelectric or ferromagnetic material, whereby the first contact is magnetically polarized, depending on an antiferromagnetic boundary surface polarization of the first layer. Said magnetic polarization forms binary information.
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