发明申请
- 专利标题: DATA OUTPUT CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS
- 专利标题(中): 半导体存储器的数据输出电路
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申请号: US12169568申请日: 2008-07-08
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公开(公告)号: US20090067278A1公开(公告)日: 2009-03-12
- 发明人: Hae Rang Choi , Kun Woo Park , Yong Ju Kim , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Ji Wang Lee
- 申请人: Hae Rang Choi , Kun Woo Park , Yong Ju Kim , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Ji Wang Lee
- 申请人地址: KR Ichon
- 专利权人: HYNIX SEMICONDUCTOR, INC.
- 当前专利权人: HYNIX SEMICONDUCTOR, INC.
- 当前专利权人地址: KR Ichon
- 优先权: KR10-2007-0090813 20070907
- 主分类号: G11C8/08
- IPC分类号: G11C8/08
摘要:
A data output circuit for a semiconductor memory apparatus includes a driver control signal generating unit that has a plurality of control signal generating units, each of which generates a driver unit control signal in response to a test signal during a test, and generates the driver unit control signal according to whether or not a fuse is cut after the test is completed, a first driver that has a plurality of driver units, each of which is activated in response to the driver unit control signal to drive a first data signal as an input signal and to output the driven first data signal to an output node, a signal combining unit that generates a first driver control signal in response to the driver unit control signal and an enable signal, and a second driver that has a plurality of driver units, each of which is activated in response to the first driver control signal to drive a second data signal as an input signal and to output the driven second data signal to the output node, and the number of driver units being two or more times as much as the number of driver units in the first driver. A voltage level on the output node is the voltage level of an output signal.
公开/授权文献
- US07808841B2 Data output circuit for semiconductor memory apparatus 公开/授权日:2010-10-05
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