发明申请
- 专利标题： SOI CMOS COMPATIBLE MULTIPLANAR CAPACITOR
- 专利标题（中）： SOI CMOS兼容多元电容器
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申请号： US11857770申请日： 2007-09-19
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公开(公告)号： US20090072290A1公开(公告)日： 2009-03-19
- 发明人: Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , William Tonti
- 申请人： Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , William Tonti
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L27/108
摘要：
An isolated shallow trench isolation portion is formed in a top semiconductor portion of a semiconductor-on-insulator substrate along with a shallow trench isolation structure. A trench in the shape of a ring is formed around a doped top semiconductor portion and filled with a conductive material such as doped polysilicon. The isolated shallow trench isolation portion and the portion of a buried insulator layer bounded by a ring of the conductive material are etched to form a cavity. A capacitor dielectric is formed on exposed semiconductor surfaces within the cavity and above the doped top semiconductor portion. A conductive material portion formed in the trench and above the doped top semiconductor portion constitutes an inner electrode of a capacitor, while the ring of the conductive material, the doped top semiconductor portion, and a portion of a handle substrate abutting the capacitor dielectric constitute a second electrode.
公开/授权文献
- US07728371B2 SOI CMOS compatible multiplanar capacitor 公开/授权日：2010-06-01
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