发明申请
- 专利标题： Semiconductor Storage Device and Method for Manufacturing the Same
- 专利标题（中）： 半导体存储装置及其制造方法
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申请号： US11576499申请日： 2005-09-30
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公开(公告)号： US20090072327A1公开(公告)日： 2009-03-19
- 发明人: Junichi Kitagawa , Shigenori Ozaki , Akinobu Teramoto , Tadahiro Ohmi
- 申请人： Junichi Kitagawa , Shigenori Ozaki , Akinobu Teramoto , Tadahiro Ohmi
- 申请人地址： JP Tokyo JP Miyagi
- 专利权人： TOKYO ELECTRON LIMITED,TOHOKU UNIVERSITY
- 当前专利权人： TOKYO ELECTRON LIMITED,TOHOKU UNIVERSITY
- 当前专利权人地址： JP Tokyo JP Miyagi
- 优先权： JP2004-290768 20041001
- 国际申请： PCT/JP2005/018179 WO 20050930
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/314 ; C23C16/54
摘要：
[Problems] To provide a semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by means of favorable nitrogen concentration profile of a gate insulating film, and to provide a method for manufacturing such a device.[Means for Solving Problems] a semiconductor device fabricating method according to a first aspect of the invention, a method for fabricating a semiconductor storage device that operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, includes a step for introducing an oxynitriding species previously diluted by plasma excitation gas, into a plasma processing apparatus, generating an oxynitriding species by means of a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.
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