公开(公告)号：US08067809B2

公开(公告)日：2011-11-29

申请号：US11576499

申请日：2005-09-30

申请人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/02

CPC分类号： H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

摘要： A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricating method operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, including introducing an oxynitriding species previously diluted by plasma excitation gas into a plasma processing apparatus, generating an oxynitriding species by a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.

摘要翻译： 具有优异的栅极绝缘膜的氮浓度分布的电特性（写/擦除特性）的半导体存储装置及其制造方法。 半导体器件制造方法通过将形成在半导体衬底和栅电极之间的栅极绝缘膜转移电荷，包括将先前由等离子体激发气体稀释的氮氧化物质引入到等离子体处理装置中，通过等离子体产生氮氧化物质，以及 在半导体衬底上形成氧氮化物膜作为栅极绝缘膜。 氮氧化物质相对于引入等离子体处理装置的气体的总体积含有0.00001〜0.01％的NO气体。

公开(公告)号：US20090072327A1

公开(公告)日：2009-03-19

申请号：US11576499

申请日：2005-09-30

申请人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L29/78 ,  H01L21/314 ,  C23C16/54

CPC分类号： H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

摘要： [Problems] To provide a semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by means of favorable nitrogen concentration profile of a gate insulating film, and to provide a method for manufacturing such a device.[Means for Solving Problems] a semiconductor device fabricating method according to a first aspect of the invention, a method for fabricating a semiconductor storage device that operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, includes a step for introducing an oxynitriding species previously diluted by plasma excitation gas, into a plasma processing apparatus, generating an oxynitriding species by means of a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.

摘要翻译： [问题]通过栅极绝缘膜的有利的氮浓度分布，提供具有优异的电特性（写/擦除特性）的半导体存储装置，并提供制造这种器件的方法。 解决问题的手段根据本发明的第一方面的半导体器件制造方法，一种制造半导体存储器件的方法，所述半导体存储器件通过在半导体衬底和栅电极之间形成的栅极绝缘膜转移电荷而工作，包括： 将先前由等离子体激发气体稀释的氮氧化物质引入等离子体处理装置，通过等离子体产生氮氧化物质，并在半导体衬底上形成氧氮化物膜作为栅极绝缘膜的步骤。 氮氧化物质相对于引入等离子体处理装置的气体的总体积含有0.00001〜0.01％的NO气体。

公开(公告)号：US08961735B2

公开(公告)日：2015-02-24

申请号：US13425872

申请日：2012-03-21

申请人： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

发明人： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

摘要： A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

摘要翻译： 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

公开(公告)号：US07632758B2

公开(公告)日：2009-12-15

申请号：US11508871

申请日：2006-08-24

申请人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

发明人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

IPC分类号： H01L21/31

CPC分类号： H01L21/02238 ,  H01J37/32192 ,  H01L21/02164 ,  H01L21/31662

摘要： An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.

摘要翻译： 一种氧化膜形成装置，包括：处理室，用于将电子器件基板设置在预定位置; 用于将水蒸汽供应到处理室中的水蒸气供应装置; 以及用于用等离子体激活水蒸气的等离子体激发装置，由此可以基于水蒸气照射等离子体的电子器件基板的表面。

公开(公告)号：US20050005844A1

公开(公告)日：2005-01-13

申请号：US10849883

申请日：2004-05-21

申请人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

发明人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

IPC分类号： H01L21/76 ,  H01J37/32 ,  H01L21/31 ,  H01L21/316 ,  C23C16/00

CPC分类号： H01L21/02238 ,  H01J37/32192 ,  H01L21/02164 ,  H01L21/31662

摘要： An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.

摘要翻译： 一种氧化膜形成装置，包括：处理室，用于将电子器件基板设置在预定位置; 用于将水蒸汽供应到处理室中的水蒸气供应装置; 以及用于用等离子体激活水蒸气的等离子体激发装置，由此可以基于水蒸气照射等离子体的电子器件基板的表面。

公开(公告)号：US20100048033A1

公开(公告)日：2010-02-25

申请号：US12612471

申请日：2009-11-04

申请人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

发明人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

IPC分类号： H01L21/314

CPC分类号： H01L21/02238 ,  H01J37/32192 ,  H01L21/02164 ,  H01L21/31662

摘要： An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.

摘要翻译： 一种氧化膜形成装置，包括：处理室，用于将电子器件基板设置在预定位置; 用于将水蒸汽供应到处理室中的水蒸气供应装置; 以及用于用等离子体激活水蒸气的等离子体激发装置，由此可以基于水蒸气照射等离子体的电子器件基板的表面。

公开(公告)号：US20070128880A1

公开(公告)日：2007-06-07

申请号：US11508871

申请日：2006-08-24

申请人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

发明人： Junichi Kitagawa ,  Shinji Ide ,  Shigenori Ozaki

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/02238 ,  H01J37/32192 ,  H01L21/02164 ,  H01L21/31662

摘要： An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.

摘要翻译： 一种氧化膜形成装置，包括：处理室，用于将电子器件基板设置在预定位置; 用于将水蒸汽供应到处理室中的水蒸气供应装置; 以及用于用等离子体激活水蒸气的等离子体激发装置，由此可以基于水蒸气照射等离子体的电子器件基板的表面。

公开(公告)号：US08905256B2

公开(公告)日：2014-12-09

申请号：US11919682

申请日：2006-07-26

申请人： Yoichiro Yamanaka ,  Junichi Kitagawa ,  Yoshihiko Yasue ,  Yasuhide Oshima ,  Hiroshi Kubo ,  Hiroki Iwasa ,  Shinsuke Watanabe ,  Katsunori Nakai

发明人： Yoichiro Yamanaka ,  Junichi Kitagawa ,  Yoshihiko Yasue ,  Yasuhide Oshima ,  Hiroshi Kubo ,  Hiroki Iwasa ,  Shinsuke Watanabe ,  Katsunori Nakai

IPC分类号： B65D1/40 ,  B32B1/08 ,  B32B7/02 ,  B32B15/08 ,  B32B27/36

CPC分类号： B32B15/08 ,  B32B27/36 ,  Y10T428/1359 ,  Y10T428/24942 ,  Y10T428/31678 ,  Y10T428/31681

摘要： A resin-coated metal sheet includes resin layers formed on both surfaces thereof and composed of a polyester as a main component, wherein the resin layer covering the inner surface of a container after the formation thereof has an interfacial free energy with water of 30 mN/m or more. The container formed from the resin-coated metal sheet exhibits an excellent content release property for contents with a high protein content.

摘要翻译： 树脂涂覆的金属板包括在其两面上形成并由聚酯作为主要成分的树脂层，其中覆盖容器的形成后的容器内表面的树脂层具有与水的界面自由能为30mN / m以上。 由树脂涂覆的金属片形成的容器对于具有高蛋白质含量的内容物具有优异的含量释放性能。

公开(公告)号：US08852389B2

公开(公告)日：2014-10-07

申请号：US13233082

申请日：2011-09-15

申请人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

发明人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192

摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。

公开(公告)号：US20110315346A1

公开(公告)日：2011-12-29

申请号：US13093954

申请日：2011-04-26

申请人： Hidekazu Nishimura ,  Kazuyuki Majima ,  Junichi Kitagawa ,  Naoyuki Nozawa

发明人： Hidekazu Nishimura ,  Kazuyuki Majima ,  Junichi Kitagawa ,  Naoyuki Nozawa

IPC分类号： F28F27/00

CPC分类号： G11B5/8404 ,  F25B21/02 ,  F28C3/005 ,  F28F3/12 ,  H01L21/67109 ,  H01L21/67173

摘要： The present invention provides a cooling apparatus capable of improving a cooling efficiency and realizing a high speed cooling process. The present invention also provides a heating apparatus capable of improving a heating efficiency of a substrate and heating the substrate at high speed. A cooling apparatus according to one embodiment of the present invention includes a chamber; a substrate carrier for holding a substrate 1 to be carried into a stop position in the chamber from a carry-in port of the chamber, and to be further carried out from a carry-out port of the chamber; a first cooling plate and a second cooling plate respectively provided on both sides of the substrate carrier carried in to the stop position in the chamber; a gas supply opening, provided in at least one of the first cooling plate and the second cooling plate, for supplying gas to the substrate, gas supply means for supplying gas to the gas supply opening and moving means for moving the first cooling plate and the second cooling plate so as to be close to the substrate carrier.

摘要翻译： 本发明提供一种能够提高冷却效率并实现高速冷却工序的冷却装置。 本发明还提供一种能够提高基板的加热效率并高速加热基板的加热装置。 根据本发明的一个实施例的冷却装置包括：室; 基板载体，用于将基板1从腔室的进口端口保持在腔室中的停止位置，并进一步从腔室的进出口进入; 分别设置在承载在所述室中的停止位置的所述基板载体的两侧上的第一冷却板和第二冷却板; 设置在所述第一冷却板和所述第二冷却板中的至少一个中的用于向所述基板供给气体的供气口，用于向所述气体供给口供给气体的气体供给单元，以及用于使所述第一冷却板和 第二冷却板以接近基板载体。