发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE
- 专利标题(中): 半导体器件及其制造方法和电器件
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申请号: US12268558申请日: 2008-11-11
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公开(公告)号: US20090073325A1公开(公告)日: 2009-03-19
- 发明人: Hideaki KUWABARA , Hiroko YAMAMOTO
- 申请人: Hideaki KUWABARA , Hiroko YAMAMOTO
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2005-014756 20050121
- 主分类号: G09G3/30
- IPC分类号: G09G3/30 ; H01L27/088 ; G09G3/36
摘要:
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.