发明申请
- 专利标题: MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
- 专利标题(中): 微波投影曝光装置
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申请号: US12210514申请日: 2008-09-15
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公开(公告)号: US20090073398A1公开(公告)日: 2009-03-19
- 发明人: Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
- 申请人: Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
- 申请人地址: DE Oberkochen
- 专利权人: Carl Zeiss SMT AG
- 当前专利权人: Carl Zeiss SMT AG
- 当前专利权人地址: DE Oberkochen
- 优先权: DE102007044678.2 20070918
- 主分类号: G03B27/52
- IPC分类号: G03B27/52 ; G03B27/72
摘要:
The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
公开/授权文献
- US08107054B2 Microlithographic projection exposure apparatus 公开/授权日:2012-01-31