发明申请
- 专利标题： MANUFACTURING METHOD OF SUBSTRATE HAVING CONDUCTIVE LAYER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 具有导电层的基板的制造方法和半导体器件的制造方法
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申请号： US12268039申请日： 2008-11-10
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公开(公告)号： US20090075476A1公开(公告)日： 2009-03-19
- 发明人: Gen FUJII , Masafumi MORISUE , Hironobu SHOJI , Junya MARUYAMA , Kouji DAIRIKI , Tomoyuki AOKI
- 申请人： Gen FUJII , Masafumi MORISUE , Hironobu SHOJI , Junya MARUYAMA , Kouji DAIRIKI , Tomoyuki AOKI
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2004-366595 20041217
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
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