发明申请
US20090078292A1 SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE
审中-公开
使用惰性气体空气干燥半导体基板的单波长方法和装置
- 专利标题： SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE
- 专利标题（中）： 使用惰性气体空气干燥半导体基板的单波长方法和装置
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申请号： US12249960申请日： 2008-10-12
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公开(公告)号： US20090078292A1公开(公告)日： 2009-03-26
- 发明人: Nathan D. Stein , Younes Achkire , Timothy J. Franklin , Julia Svirchevski , Dan A. Marohl
- 申请人： Nathan D. Stein , Younes Achkire , Timothy J. Franklin , Julia Svirchevski , Dan A. Marohl
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： B08B13/00
- IPC分类号： B08B13/00
摘要：
In one aspect, an apparatus is provided. The apparatus comprises a chamber; a plurality of rollers adapted to support a wafer in a vertical orientation within a chamber; a pair of brushes adapted to scrub a first and a second side of the wafer respectively; a first spray bar adapted to spray a liquid on the wafer to form a meniscus on the wafer as the wafer is lifted out of the chamber; and a second spray bar adapted to direct a vapor to the meniscus, the vapor being adapted to lower a surface tension of the liquid at the meniscus to perform Marangoni drying of the wafer as the wafer is lifted out of the chamber. Numerous other aspects are provided.
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