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1.发明授权Single wafer apparatus for drying semiconductor substrates using an inert gas air-knife 有权使用惰性气体气刀干燥半导体衬底的单晶片装置公开(公告)号：US08322045B2
公开(公告)日：2012-12-04
申请号：US12249956
申请日：2008-10-12
IPC分类号： F26B21/06
CPC分类号： H01L21/67034
摘要： In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种基板处理装置。 该装置包括用于通过移动衬底通过流体在衬底的表面上形成弯液面的机构; 定位成施加气刀以缩短形成在基板表面上的弯液面的气刀装置; 以及干燥蒸汽喷嘴，定位成将干燥蒸汽引导到由气刀缩短的弯液面。 提供了许多其他方面。
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2.发明申请SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE 审中-公开使用惰性气体空气干燥半导体基板的单波长方法和装置公开(公告)号：US20090078292A1
公开(公告)日：2009-03-26
申请号：US12249960
申请日：2008-10-12
IPC分类号： B08B13/00
CPC分类号： H01L21/67034
摘要： In one aspect, an apparatus is provided. The apparatus comprises a chamber; a plurality of rollers adapted to support a wafer in a vertical orientation within a chamber; a pair of brushes adapted to scrub a first and a second side of the wafer respectively; a first spray bar adapted to spray a liquid on the wafer to form a meniscus on the wafer as the wafer is lifted out of the chamber; and a second spray bar adapted to direct a vapor to the meniscus, the vapor being adapted to lower a surface tension of the liquid at the meniscus to perform Marangoni drying of the wafer as the wafer is lifted out of the chamber. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种装置。 该装置包括一个室; 适于在腔室内以垂直取向支撑晶片的多个辊; 一对刷子，分别用于擦拭所述晶片的第一和第二侧; 第一喷杆，当晶片被提升出室时，适于在晶片上喷射液体以在晶片上形成弯月面; 以及适于将蒸汽引导到弯液面的第二喷杆，所述蒸汽适于降低所述弯液面处的液体的表面张力，以在所述晶片被提升到所述腔室之后执行所述晶片的马兰戈尼干燥。 提供了许多其他方面。
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3.发明申请SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE 有权使用惰性气体空气干燥半导体基板的单波长方法和装置公开(公告)号：US20090044839A1
公开(公告)日：2009-02-19
申请号：US12249956
申请日：2008-10-12
IPC分类号： B08B13/00
CPC分类号： H01L21/67034
摘要： In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种基板处理装置。 该装置包括用于通过移动衬底通过流体在衬底的表面上形成弯液面的机构; 定位成施加气刀以缩短形成在基板表面上的弯液面的气刀装置; 以及干燥蒸汽喷嘴，定位成将干燥蒸汽引导到由气刀缩短的弯液面。 提供了许多其他方面。
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4.发明申请SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE 审中-公开使用惰性气体空气干燥半导体基板的单波长方法和装置公开(公告)号：US20090032068A1
公开(公告)日：2009-02-05
申请号：US12249961
申请日：2008-10-12
CPC分类号： H01L21/67034
摘要： In one aspect, a method is provided. The method comprises forming a meniscus at an interface between a substrate and a fluid surface by moving the substrate through the fluid; shortening the meniscus by applying an air knife to the meniscus at the interface between the substrate and the fluid surface; and Marangoni drying the substrate by applying a drying vapor to the shortened meniscus. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种方法。 该方法包括通过移动衬底通过流体在衬底和流体表面之间的界面处形成弯液面; 通过在基板和流体表面之间的界面处向弯液面施加气刀来缩短弯月面; 并且Marangoni通过对缩短的弯液面施加干燥蒸气来干燥基底。 提供了许多其他方面。
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