发明申请
- 专利标题: METHOD OF FABRICATING AN INTEGRATED CIRCUIT WITH STRESS ENHANCEMENT
- 专利标题(中): 用应力增强制造集成电路的方法
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申请号: US11860413申请日: 2007-09-24
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公开(公告)号: US20090079023A1公开(公告)日: 2009-03-26
- 发明人: Joerg Berthold , Winfried Kamp , Fritz Rothacher
- 申请人: Joerg Berthold , Winfried Kamp , Fritz Rothacher
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; G06F17/50 ; H01L27/00
摘要:
A method of fabricating an integrated circuit including arranging a plurality of cells to form a desired floor plan of the integrated circuit, wherein each cell comprises at least one transistor, forming a plurality of circuit constituents from the plurality of cells of the floor plan, wherein each circuit constituent comprises at least one cell and belongs to one of a plurality circuit constituent types, and applying mechanical stress to channel regions of the at least one transistor of each cell based on the circuit constituent type of the circuit constituent to which the cell belongs.
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