发明申请
- 专利标题： Forming SOI Trench Memory with Single-Sided Buried Strap
- 专利标题（中）： 形成具有单面埋地带的SOI沟槽存储器
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申请号： US12169727申请日： 2008-07-09
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公开(公告)号： US20090079030A1公开(公告)日： 2009-03-26
- 发明人: Kangguo Cheng , Ramachandra Divakaruni , Herbert L. Ho , Geng Wang
- 申请人： Kangguo Cheng , Ramachandra Divakaruni , Herbert L. Ho , Geng Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/92
摘要：
A method of forming a trench memory cell includes forming a trench capacitor within a substrate material, the trench capacitor including a node dielectric layer formed within a trench and a conductive capacitor electrode material formed within the trench in contact with the node dielectric layer; forming a strap mask so as cover one side of the trench and removing one or more materials from an uncovered opposite side of the trench; and forming a conductive buried strap material within the trench; wherein the strap mask is patterned in a manner such that a single-sided buried strap is defined within the trench, the single-sided buried strap configured in a manner such that the deep trench capacitor is electrically accessible at only one side of the trench.
公开/授权文献
- US07776706B2 Forming SOI trench memory with single-sided buried strap 公开/授权日：2010-08-17
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