发明申请
- 专利标题: ORGANOSILOXANE MATERIALS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS
- 专利标题(中): 无机材料选择区沉积物的有机硅氧烷材料
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申请号: US11861705申请日: 2007-09-26
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公开(公告)号: US20090081374A1公开(公告)日: 2009-03-26
- 发明人: Cheng Yang , Lyn M. Irving , David H. Levy , Peter J. Cowdery-Corvan , Diane C. Freeman
- 申请人: Cheng Yang , Lyn M. Irving , David H. Levy , Peter J. Cowdery-Corvan , Diane C. Freeman
- 主分类号: C08F2/46
- IPC分类号: C08F2/46
摘要:
An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.