发明申请
- 专利标题： METHOD FOR MANUFACTURING SOI SUBSTRATE
- 专利标题（中）： 制造SOI衬底的方法
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申请号： US12212990申请日： 2008-09-18
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公开(公告)号： US20090081850A1公开(公告)日： 2009-03-26
- 发明人: Hideto OHNUMA , Shunpei YAMAZAKI
- 申请人： Hideto OHNUMA , Shunpei YAMAZAKI
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2007-245603 20070921
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
The method includes steps of adding first ions to a predetermined depth from a main surface of a semiconductor substrate by irradiation of the semiconductor substrate with a planar, linear, or rectangular ion beam, so that a separation layer is formed; adding second ions to part of the separation layer formed in the semiconductor substrate; disposing the main surface of the semiconductor substrate and a main surface of a base substrate to face each other in order to bond a surface of an insulating film and the base substrate; and cleaving the semiconductor substrate using the separation layer as a cleavage plane, so that a single crystal semiconductor layer is formed over the base substrate. The mass number of the second ions is the same as or larger than that of the first ions.
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