Invention Application
- Patent Title: EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS
- Patent Title (中): 发光二极管装置的外延基板及其制造方法及其制造方法
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Application No.: US12198331Application Date: 2008-08-26
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Publication No.: US20090090930A1Publication Date: 2009-04-09
- Inventor: Shih-Peng Chen , Ching-Chuan Shiue , Chao-Min Chen , Cheng-Huang Kuo , Huang-Kun Chen
- Applicant: Shih-Peng Chen , Ching-Chuan Shiue , Chao-Min Chen , Cheng-Huang Kuo , Huang-Kun Chen
- Priority: TW096137372 20071005
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L33/00
Abstract:
A manufacturing method of an epitaxial substrate includes the steps of: forming a sacrificial layer, which has a first micro/nano structure, on a substrate; and forming a buffer layer on the sacrificial layer. The sacrificial layer comprises a plurality of micro/nano particles, and the first micro/nano structure is formed after the plurality of micro/nano particles are removed. An epitaxial substrate and a manufacturing method of a light emitting diode (LED) apparatus are also disclosed.
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