发明申请
- 专利标题: LASER DIODE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 激光二极管及其制造方法
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申请号: US12237547申请日: 2008-09-25
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公开(公告)号: US20090092163A1公开(公告)日: 2009-04-09
- 发明人: Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
- 申请人: Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-259429 20071003
- 主分类号: H01S5/02
- IPC分类号: H01S5/02 ; H01L21/02
摘要:
Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.
公开/授权文献
- US07965749B2 Laser diode and method of manufacturing the same 公开/授权日:2011-06-21