Invention Application
US20090096028A1 Transistor of the I-MOS Type Comprising Two Independent Gates and Method of Using Such a Transistor
有权
包含两个独立门的I-MOS型晶体管和使用这种晶体管的方法
- Patent Title: Transistor of the I-MOS Type Comprising Two Independent Gates and Method of Using Such a Transistor
- Patent Title (中): 包含两个独立门的I-MOS型晶体管和使用这种晶体管的方法
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Application No.: US12085866Application Date: 2006-12-01
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Publication No.: US20090096028A1Publication Date: 2009-04-16
- Inventor: Cyrille Le Royer , Olivier Faynot , Laurent Clavelier
- Applicant: Cyrille Le Royer , Olivier Faynot , Laurent Clavelier
- Applicant Address: FR PARIS
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE
- Current Assignee Address: FR PARIS
- Priority: FR0512358 20051206
- International Application: PCT/FR2006/002628 WO 20061201
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
The transistor comprises a source (1) and a drain (2) separated by a lightly doped intermediate zone (I). The intermediate zone (I) forms first (3) and second (4) junctions respectively with the source (1) and with the drain (2). The transistor comprises a first gate (5) to generate an electric field in the intermediate zone (I), on the same side as the first junction (3), and a second gate (6) to generate an electric field in the intermediate zone (I), on the same side as the second junction (4).
Public/Granted literature
- US07732282B2 Transistor of the I-MOS type comprising two independent gates and method of using such a transistor Public/Granted day:2010-06-08
Information query
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