发明申请
- 专利标题: STRUCTURE AND METHODS OF FORMING CONTACT STRUCTURES
- 专利标题(中): 形成接触结构的结构和方法
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申请号: US11870551申请日: 2007-10-11
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公开(公告)号: US20090096108A1公开(公告)日: 2009-04-16
- 发明人: Ying Li , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人: Ying Li , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/44
摘要:
Methods and a structure. A method of forming contact structure includes depositing a silicide layer onto a substrate; depositing an electrically insulating layer over a first surface of the silicide layer; forming a via through the insulating layer extending to the first surface; depositing an electrically conductive layer covering a bottom and at least one vertical wall of the via; removing the conductive layer from the bottom; and filling the via with aluminum directly contacting the silicide layer. A structure includes: a silicide layer disposed on a substrate; an electrically insulating layer disposed over the silicide layer; an aluminum plug extending through the insulating layer and directly contacting the silicide layer; and an electrically conductive layer disposed between the plug and the insulating layer. Also included is a method where an aluminum layer grows selectively from a silicide layer and at least one sidewall of a trench.
公开/授权文献
- US08183145B2 Structure and methods of forming contact structures 公开/授权日:2012-05-22