发明申请
- 专利标题: Memory module having star-type topology and method of fabricating the same
- 专利标题(中): 具有星型拓扑的存储器模块及其制造方法
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申请号: US12221728申请日: 2008-08-06
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公开(公告)号: US20090097297A1公开(公告)日: 2009-04-16
- 发明人: Do-Hyung Kim , Byoung-Ha Oh , Young-Jun Park , Yong-Ho Ko
- 申请人: Do-Hyung Kim , Byoung-Ha Oh , Young-Jun Park , Yong-Ho Ko
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2007-0078571 20070806
- 主分类号: G11C5/02
- IPC分类号: G11C5/02 ; H01S4/00 ; G11C5/06
摘要:
A memory module having a start-type topology and a method of fabricating the same are provided. The memory module includes a substrate. Memory devices are mounted on the substrate in at least two rows and at least two columns. A star-type topology is disposed to be electrically connected to the memory devices. One or more pairs of adjacent ones of the memory devices have a point-symmetric structure.
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