发明申请
- 专利标题： THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 薄膜晶体管阵列及其制造方法
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申请号： US12334241申请日： 2008-12-12
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公开(公告)号： US20090098673A1公开(公告)日： 2009-04-16
- 发明人: Sung-Hoon Yang , Kunal Satyabhushan Girotra , Byoung-June Kim
- 申请人： Sung-Hoon Yang , Kunal Satyabhushan Girotra , Byoung-June Kim
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electonics Co. Ltd.
- 当前专利权人： Samsung Electonics Co. Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2004-103020 20041208
- 主分类号： H01L21/77
- IPC分类号： H01L21/77
摘要：
A TFT array panel-including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability.