METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Invention Application

US20090098738A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效

Title translation: 制造半导体器件的方法

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Patent Title: METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Patent Title (中): 制造半导体器件的方法
Application No.: US11963907

Application Date: 2007-12-24
Publication No.: US20090098738A1

Publication Date: 2009-04-16
Inventor: Eun Shil Park , Kwon Hong , Jae Hong Kim , Jae Hyoung Koo
Applicant: Eun Shil Park , Kwon Hong , Jae Hong Kim , Jae Hyoung Koo
Applicant Address: KR Icheon-Si
Assignee: HYNIX SEMICONDUCTOR INC.
Current Assignee: HYNIX SEMICONDUCTOR INC.
Current Assignee Address: KR Icheon-Si
Priority: KR10-2007-102121 20071010
Main IPC: H01L21/314
IPC: H01L21/314

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Abstract:

A method of fabricating a flash memory device is disclosed. The method comprises forming a first insulating layer on a semiconductor substrate; accumulating nitrogen at an interface between the semiconductor substrate and the first insulating layer to form a second insulating layer at the interface; and implanting oxygen into the second insulating layer to convert the second insulating layer to a third insulating layer.

Abstract(Chinese):

公开了一种制造闪速存储器件的方法。该方法包括在半导体衬底上形成第一绝缘层; 在所述半导体衬底和所述第一绝缘层之间的界面处积累氮以在所述界面处形成第二绝缘层; 以及将氧注入到所述第二绝缘层中，以将所述第二绝缘层转换成第三绝缘层。

Public/Granted literature

US07648923B2 Method of fabricating semiconductor device Public/Granted day:2010-01-19

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）