发明申请
- 专利标题： LOCAL PRESSURE SENSING IN A PLASMA PROCESSING SYSTEM
- 专利标题（中）： 等离子体处理系统中的局部压力感测
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申请号： US11860333申请日： 2007-10-22
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公开(公告)号： US20090101848A1公开(公告)日： 2009-04-23
- 发明人: Steven R. Walther , Harold M. Persing
- 申请人： Steven R. Walther , Harold M. Persing
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： G21K5/00
- IPC分类号： G21K5/00
摘要：
A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.
公开/授权文献
- US07638781B2 Local pressure sensing in a plasma processing system 公开/授权日：2009-12-29
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