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公开(公告)号：US20090078871A1
公开(公告)日：2009-03-26
申请号：US11860696
申请日：2007-09-25
CPC分类号： H01L21/67253
摘要： A workpiece processing system includes a platen configured to support a workpiece, a source configured to provide an electromagnetic wave proximate a front surface of the workpiece, and a detector. The detector is configured to receive at least a portion of the electromagnetic wave and provide a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts. A method of detecting an outgassing rate is also provided. The method includes providing an electromagnetic wave proximate a front surface of a workpiece, receiving at least a portion of the electromagnetic wave, and providing a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts.
摘要翻译： 工件处理系统包括被配置为支撑工件的压板，被配置为提供靠近工件的前表面的电磁波的源和检测器。 检测器被配置为接收电磁波的至少一部分并且提供表示来自除气副产物的工件的除气速率的检测信号。 还提供了一种检测排气速率的方法。 该方法包括在工件的前表面附近提供电磁波，接收电磁波的至少一部分，以及提供代表来自除气副产物的工件的除气速率的检测信号。
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公开(公告)号：US07638781B2
公开(公告)日：2009-12-29
申请号：US11860333
申请日：2007-10-22
IPC分类号： A61N5/00
CPC分类号： H01J37/3299 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.
摘要翻译： 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。
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公开(公告)号：US20090101848A1
公开(公告)日：2009-04-23
申请号：US11860333
申请日：2007-10-22
IPC分类号： G21K5/00
CPC分类号： H01J37/3299 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.
摘要翻译： 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。
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公开(公告)号：US07615748B2
公开(公告)日：2009-11-10
申请号：US11860696
申请日：2007-09-25
IPC分类号： G01J5/10
CPC分类号： H01L21/67253
摘要： A workpiece processing system includes a platen configured to support a workpiece, a source configured to provide an electromagnetic wave proximate a front surface of the workpiece, and a detector. The detector is configured to receive at least a portion of the electromagnetic wave and provide a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts. A method of detecting an outgassing rate is also provided. The method includes providing an electromagnetic wave proximate a front surface of a workpiece, receiving at least a portion of the electromagnetic wave, and providing a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts.
摘要翻译： 工件处理系统包括被配置为支撑工件的压板，被配置为提供靠近工件前表面的电磁波的源和检测器。 检测器被配置为接收电磁波的至少一部分并且提供表示来自除气副产物的工件的除气速率的检测信号。 还提供了一种检测排气速率的方法。 该方法包括在工件的前表面附近提供电磁波，接收电磁波的至少一部分，以及提供代表来自除气副产物的工件的除气速率的检测信号。
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公开(公告)号：US20090104719A1
公开(公告)日：2009-04-23
申请号：US11877312
申请日：2007-10-23
申请人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
发明人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
IPC分类号： H01L21/66
摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.
摘要翻译： 等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 测量吸附到基底的一定剂量的离子。 执行至少一个传感器测量以确定等离子体室的状态。 此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。
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公开(公告)号：US20090061605A1
公开(公告)日：2009-03-05
申请号：US12267193
申请日：2008-11-07
申请人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
发明人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/31705 , H01L21/2236
摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
摘要翻译： 在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。 该方法可以包括在一个实施方案中的非晶化步骤。
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公开(公告)号：US20080318345A1
公开(公告)日：2008-12-25
申请号：US11766984
申请日：2007-06-22
申请人： Harold M. Persing , Vikram Singh , Edwin Arevalo
发明人： Harold M. Persing , Vikram Singh , Edwin Arevalo
IPC分类号： H01L21/265 , G01B9/02 , G21K5/00
CPC分类号： G01N21/55 , G01N2021/8416 , H01J37/32412 , H01J37/32935
摘要： An approach that determines an ion implantation processing characteristic in a plasma ion implantation of a substrate is described. In one embodiment, there is a light source configured to direct radiation onto the substrate. A detector is configured to measure radiation reflected from the substrate. A processor is configured to correlate the measured radiation reflected from the substrate to an ion implantation processing characteristic.
摘要翻译： 描述了确定衬底的等离子体离子注入中的离子注入处理特性的方法。 在一个实施例中，存在被配置为将辐射引导到衬底上的光源。 检测器被配置成测量从衬底反射的辐射。 处理器被配置为将从衬底反射的测量的辐射与离子注入处理特性相关联。
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8.发明申请TECHNIQUE FOR USING AN IMPROVED SHIELD RING IN PLASMA-BASED ION IMPLANTATION 审中-公开在等离子体离子植入中使用改进的护环的技术公开(公告)号：US20080160170A1
公开(公告)日：2008-07-03
申请号：US11617348
申请日：2006-12-28
CPC分类号： H01J37/32082 , H01J37/32018 , H01J37/32412 , H01J37/32422 , H01J37/32642 , H01J37/32935 , H01J37/3299
摘要： A technique for using an improved shield ring in plasma-based ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for plasma-based ion implantation, such as radio frequency plasma doping (RF-PLAD). The apparatus and method may comprise a shield ring positioned on a same plane as and around a periphery of a target wafer, wherein the shield ring comprises an aperture-defining device for defining an area of at least one aperture, a Faraday cup positioned under the at least one aperture, and dose count electronics connected the Faraday cup for calculating ion dose rate. The at least one aperture may comprise at least one of a circular, arc-shaped, slit-shaped, ring-shaped, rectangular, triangular, and elliptical shape. The aperture-defining device may comprise at least one of silicon, silicon carbide, carbon, and graphite.
摘要翻译： 公开了一种在等离子体离子注入中使用改进的屏蔽环的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于基于等离子体的离子注入的装置和方法，例如射频等离子体掺杂（RF-PLAD）。 该装置和方法可以包括一个屏蔽环，该屏蔽环与目标晶片的周边定位在同一平面上，其中屏蔽环包括用于限定至少一个孔的区域的孔限定装置，位于下方的法拉第杯 至少一个孔径和剂量计数电子元件连接法拉第杯以计算离子剂量率。 至少一个孔可以包括圆形，弧形，狭缝状，环形，矩形，三角形和椭圆形中的至少一个。 孔限定装置可以包括硅，碳化硅，碳和石墨中的至少一种。
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公开(公告)号：US07687787B2
公开(公告)日：2010-03-30
申请号：US12267193
申请日：2008-11-07
申请人： Ludovic Godet , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
发明人： Ludovic Godet , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
IPC分类号： H01J37/317 , H01L21/265 , H05H1/24
CPC分类号： H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/31705 , H01L21/2236
摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
摘要翻译： 在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。 该方法可以包括在一个实施方案中的非晶化步骤。
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公开(公告)号：US07528389B2
公开(公告)日：2009-05-05
申请号：US11376522
申请日：2006-03-15
申请人： Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
发明人： Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
IPC分类号： H01J37/244
CPC分类号： H01J37/32412 , H01J37/3171 , H01J37/3299 , H01J2237/31705
摘要： A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.
摘要翻译： 一种方法和装置旨在在等离子体掺杂系统中提供掺杂剂分布调整解决方案，以满足浓度和结深度要求。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，使得在垂直和横向方向上的浅和突变结被实现，这对于等离子体掺杂系统中的器件缩放至关重要。
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