发明申请
- 专利标题: Light Emitting Diode Structures
- 专利标题(中): 发光二极管结构
-
申请号: US12344935申请日: 2008-12-29
-
公开(公告)号: US20090101931A1公开(公告)日: 2009-04-23
- 发明人: Majd Zoorob , John Lincoln
- 申请人: Majd Zoorob , John Lincoln
- 申请人地址: TW Chunan Miaoli County
- 专利权人: LUXTALTEK CORPORATION
- 当前专利权人: LUXTALTEK CORPORATION
- 当前专利权人地址: TW Chunan Miaoli County
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Light emitting diode (LED) structures are described that include a first layer and a light-generating layer, wherein light generated in the light-generating layer generally emerges from the LED structure through the upper surface of the first layer. The coupling out of light generated by spontaneous emission is enhanced by the presence of patterning in the first layer, which may take the form of an embedded photonic quasicrystal, a photonic structure comprising an amorphous array of subregions, or a zone plate structure. The invention provides the benefit of improved light extraction from the LED without undesirable far field illumination patterns.
公开/授权文献
- US07672548B2 Light emitting diode structures 公开/授权日:2010-03-02
信息查询
IPC分类: