发明申请
- 专利标题： SPLIT CHARGE STORAGE NODE INNER SPACER PROCESS
- 专利标题（中）： 分离式充电储存装置内部空间过程
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申请号： US11873822申请日： 2007-10-17
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公开(公告)号： US20090101963A1公开(公告)日： 2009-04-23
- 发明人: Minghao Shen , Shenqing Fang , Wai Lo , Christie R.K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
- 申请人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R.K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
- 申请人地址： US CA Sunnyvale
- 专利权人： SPANSION LLC
- 当前专利权人： SPANSION LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
Methods of forming a memory cell containing two split sub-lithographic charge storage nodes on a semiconductor substrate are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing exposed portions of a first poly layer while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing exposed portions of a charge storage layer while leaving portions of the charge storage layer protected by the two split sub-lithographic first poly gates, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.
公开/授权文献
- US07829936B2 Split charge storage node inner spacer process 公开/授权日：2010-11-09
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